| dc.contributor.author | Kabadayi, O | |
| dc.date.accessioned | 2020-06-21T15:43:22Z | |
| dc.date.available | 2020-06-21T15:43:22Z | |
| dc.date.issued | 2004 | |
| dc.identifier.issn | 0031-8949 | |
| dc.identifier.issn | 1402-4896 | |
| dc.identifier.uri | https://doi.org/10.1238/Physica.Regular.069a00135 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12712/21601 | |
| dc.description | WOS: 000189179600011 | en_US |
| dc.description.abstract | In this study we calculated channelled ion ranges of boron ions by using an impact parameter dependent stopping power model. Impact parameter dependent stopping powers for boron ions penetrating into Si (100) are investigated first for energies from 10 to 150 keV. We assumed that impact parameter dependent stopping powers can be expressed by a modified Oen-Robinson formula [1] (Oen et al. Nucl. Instr. Meth. B132, 647 (1976)). The model is implemented by developing a computer code to solve a differential equation numerically for which mean ion ranges can be obtained. The results are compared with experimental data as well as Crystal-TRIM. SRIM and similar procedures calculating ion ranges in solids. We have found an agreement between our results and literature. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Iop Publishing Ltd | en_US |
| dc.relation.isversionof | 10.1238/Physica.Regular.069a00135 | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | Ranges of channelled keV B ions in Si crystals with impact parameter dependent stopping power | en_US |
| dc.type | article | en_US |
| dc.contributor.department | OMÜ | en_US |
| dc.identifier.volume | 69 | en_US |
| dc.identifier.issue | 2 | en_US |
| dc.identifier.startpage | 135 | en_US |
| dc.identifier.endpage | 138 | en_US |
| dc.relation.journal | Physica Scripta | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
